Search results for "Flash memory"
showing 10 items of 15 documents
TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory
2008
We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.
Compact instrumentation for radiation tolerance test of flash memories in space environment
2010
Aim of this work is the description of a test equipment, designed to be integrated on board of a microsatellite, able to investigate the radiation tolerance of non-volatile memory arrays in a real flight experiment. An FPGA-based design was adopted to preserve a high flexibility degree. Besides standard Program/Read/Erase functions, additional features such as failure data screening and latch-up protection have been implemented. The instrument development phase generated, as a by-product, a non-rad-hard version of the instrument that allowed performing in-situ experiments using 60Co and 10 MeV Boron irradiation facilities on Ground. Preliminary measurement results are reported to show the i…
Ionizing radiation effects on Non Volatile Read Only Memory cells
2012
Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.
Impact of the erase algorithms on flash memory lifetime
2017
This paper presents a comparative study on the impact of the erase algorithm on flash memory lifetime, to demonstrate how the reduction of overall stress, suffered by memories, will increase their lifetime, thanks to a smart management of erase operations. To this purpose a fixed erase voltage, equal to the maximum value and the maximum time-window, was taken as the reference test; while an algorithm with adaptive voltage levels and the same overall time-window was designed and implemented in order to compare their experimental results. This study was carried out by using an innovative Automated Test Equipment, named Portable-ATE, tailored for Memory Test Chip and designed for performance e…
Nanocrystal memories for FLASH device applications
2004
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…
Direct evidence of secondary recoiled nuclei from high energy protons
2008
The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions. © 2006 IEEE.
Neutron-induced soft errors in advanced Flash memories
2008
Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.
FADaC
2019
Solid state drives (SSDs) implement a log-structured write pattern, where obsolete data remains stored on flash pages until the flash translation layer (FTL) erases them. erase() operations, however, cannot erase a single page, but target entire flash blocks. Since these victim blocks typically store a mix of valid and obsolete pages, FTLs have to copy the valid data to a new block before issuing an erase() operation. This process therefore increases the latencies of concurrent I/Os and reduces the lifetime of flash memory. Data classification schemes identify data pages with similar update frequencies and group them together. FTLs can use this grouping to design garbage collection strategi…
Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories
2009
Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.
Heavy ion SEE studies on 4-Gbit NAND-Flash memories
2007
Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.